Our new Deep Silicon Etching and Atomic Layer Etching tool is now available for user access. This state-of-the-art tool offers a couple of innovative features and exceptional etching performance, providing you with enhanced flexibility, precision, and process stability/repeatability for your research.

Key features include:

• Deep Silicon etching with a fast-switching Bosch process, achieving a high silicon etching rate of >8μm/min and excellent selectivity to photoresist (PR) and SiO2 mask materials (>120:1 Si-to-PR, >300:1 Si-to-SiO2)
• Cryo Si etching process for ultra-smooth sidewall silicon etching, with sidewall scallop size <5nm (RMS)
• Atomic Layer Etching (ALE) capabilities for etching certain Si-based materials, such as SiN, with a developed SiN ALE process and additional ALE recipes in development
• Wide substrate temperature range (-150°C to 400°C) with rapid heating/cooling
• Compatibility with 6″ diameter Si wafers, with a clamp to hold the sample on the RF chuck; small size wafers/pieces can be placed on a 6” silicon carrier wafer

Please submit your training request on the Oxford Cobra 300 tool via FOM. Please don’t hesitate to reach out to Nano3 staff for questions.