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TOOL RESERVATION

Month: September 2025

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News and Announcements

New Tool Announcement_Keyence VK-X3000 3D Surface Profiler

New Keyence VK-X3000 3D Surface Profiler

The new Keyence 3D Surface Profiler VK-X3000 is now available for user access at Nano3. This cutting-edge tool is designed to revolutionize surface measurement and analysis, offering unparalleled performance and versatility.

The new tool boasts many advanced features:
  • Different scan approaches: Combining laser confocal scanning and focus variation for high-accuracy measurement and analysis.
  • High-resolution color observation: Captures true-to-life images with material texture, shape, and surface conditions .
  • Many many measurement tools: Enables diverse analysis from profile measurement to roughness characterization.
With the new tool, you can generate fantastic 3D images, profiles, and data, including:
  • High-resolution 3D images
  • Non-contact surface scanning
  • Precise profiles  with nanometer resolutions
  • Detailed surface characterization
We invite all users to explore the capabilities of this new tool. Please submit your training request on the Keyence VK-X3000 Surface Profiler via FOM. Looking forward to seeing the innovative research and applications that this new tool will enable.
Categories
News and Announcements

New Tool Announcement_Thermal/Plasma ALD System

New Arradiance GEMStar Thermal & Plasma Atomic Layer Deposition System

Exciting News for Nano3 Users! We are happy to announce that the new Arradiance GEMStar Thermal & Plasma ALD (Atomic Layer Deposition) System is now available for user access. This advanced ALD system, integrated with a two-glove glovebox system, enables the transfer and coating of air-sensitive or moisture-sensitive samples, expanding possibilities for your research. 

Other key features of the new ALD system include:

  • 300W air-cooled plasma head with automatic matching
  • 200 mm substrate holder accommodating up to 8″ wafer
  • High Speed 10ms Thermal ALD Valves
  • Metrology Port QCM (Quartz Crystal Microbalance)
  • Ozone (O3) Generator
  • Precursors Installed: TDMASn (60 C), TDMAH (60 C), TDMAZ (75 C), H2O, Plasma Ar, Plasma O2

Please submit your training request on the Arradiance Atomic Layer Deposition System via FOM. Please don’t hesitate to reach out to Nano3 staff for questions.

MLA150 Two

Overview: The Heidelberg maskless aligner, MLA150 Two, is Nano3’s newer direct-write lithography tool with fast writing speeds and easy operation. Compared to the older Nano3 maskless aligner, the MLA150 One, this tool is able to achieve smaller feature sizes at the cost of slower writing speeds. The MLA150 Two is also equipped with optical autofocus, allowing smaller sample sizes to be exposed. The tool allows the user to directly pattern photoresists without the need for photomasks; CAD files are written directly into the resist. Photoresists for g-, h-, and i-line exposure can be used with the system, and a low-quality exposure mode can reduce exposure times. The system has additional features not typically found in mask aligners. It can automatically add labeling and serialization information to designs. When using structures with random locations, the software’s Draw Mode allows exposures to be drawn on a real-time view of the substrate from the system’s camera. For situations where three-dimensional patterns are needed in the photoresist, the MLA150’s grayscale capability can be used.

SYSTEM SPECIFICATIONS

  • Light source: diode laser 2.8W at 375 nm
  • Substrate sizes: 5 mm x 5 mm to 228 mm x 228 mm
  • Maximum exposure area: 150 mm x 150 mm
  • Minimum feature size: 0.45 µm (isolated line)
  • Alignment: Front-side alignment accuracy: < 0.5 µm
  • Alignment: Back-side alignment accuracy: < 1 µm
  • Grayscale: 128 levels
  • CAD input formats: GDSII, DXF, CIF, Gerber

Located in room #1405

 

Anton Paar Julia DSC 500 (Differential Scanning Calorimeter)

The Julia 500 DSC is a powerful, highly versatile thermal analysis instrument designed to measure how materials absorb or release heat as they are heated, cooled, or held at a constant temperature. It provides critical insights into a material’s melting behavior, crystallization, curing processes, and overall thermal stability.

Key features:

  • Precise Thermal Tracking: Accurately measures heat absorption and release during phase transitions and structural changes
  • Broad Versatility: Ideal for evaluating everything from complex pharmaceutical blends to engineered polymers and food products
  • Heat Capacity & Stability: Accurately determines baseline heat capacity and evaluates oxidation stability under varying conditions

Key applications:

  • Polymers & Plastics
    Quantifies polymer fractions, assesses thermal properties of recycled materials, and evaluates thermoplastics across wide temperature ranges.
  • Pharmaceuticals
    Identifies drug polymorphs (like Carbamazepine) and conducts rigorous purity analyses according to ASTM E928-19 standards.
  • Energy Storage
    Performs vital thermal characterizations on lithium-ion battery separators to ensure performance stability and safety.
  • Food Science
    Characterizes the precise melting profiles of chocolate and evaluates thermal behavior of structured fats.
  • Rubbers & Resins
    Characterizes rubber compounds and provides highly reliable cure monitoring for industrial epoxy resins.

Located in room #1420

Hit 300 Nanoindenter

The Anton Paar Hit 300 is a premium, high-precision automated material testing system designed to rapidly determine mechanical properties at the nanometer scale. It provides highly accurate, depth-dependent profiling of hardness, elastic modulus, and viscoelasticity across an extensive range of materials.

Key features:

  • High Throughput: Automation enables rapid, reproducible results, executing up to 600 measurements per hour
  • Active Vibration Damping: Ensures uncompromised accuracy in almost any operational environment
  • Substrate Independence: Accurately profiles ultra-thin films without underlying substrate interference.

Key applications:

  • Advanced Coatings: Characterizes the structure, and hardness of galvanic layers, diamond-like carbon (DLC), and AlTiN protective tool coatings.
  • Automotive Industry: Tests the mechanical integrity of automotive
    components and bridges the gap to conventional macro-scale hardness testing.
  • Energy Storage: Analyzes the mechanical stability of Li-ion battery
    electrodes (e.g., with zinc additions) to improve lifespan and efficiency.
  • Polymers & Plastics: Performs Dynamic Mechanical Analysis (DMA) to determine complex viscoelastic behaviors.

Located in room #1414

PHI Genesis XPS (X-ray Photoelectron Spectroscopy)

Designer (5)

PHI Genesis Scanning XPS (X-ray Photoelectron Spectroscopy)

  • Fully Automated Multi-Technique Scanning XPS/HAXPES
  • Al, and Cr dual monochromated X-ray sources
  • <5 microns microprobe size in x and y for Al X-ray source and <14 microns for Cr X-ray source
  • Analytical information depth using the Cr X-ray source is about 3 times deeper than with Al x-ray source
  • Depth profiling with multiple ion gun options (monatomic Argon, Argon cluster GCIB) for a variety of organic, inorganic, and mixed materials
  • Large sample handling
  • Multiple parking positions
  • Automated sample transfer and handling
  • Fast automated switching between XPS and HAXPES modes
  • UPS (Ultraviolet Photoelectron Spectroscopy)
  • Angle-Dependent XPS (ADXPS)
  • Fully integrated high energy and high spatial resolution Auger
  • Hot/cold stage: -100°C to 500°C

Located in room #1420

Arradiance GEMStar XT-DP Dual Manifold Thermal/PEALD (Atomic Layer Deposition)

The Arradiance GEMStar XT-DP Dual Manifold Thermal/PEALD System Includs a 2-Zone 1500W Reactor Chamber, up to 300C process temperature, and a reactor with 1.25″  in height.

Other Features include:

  • Integrated with a two-glove glovebox system allowing transferring air sensitive or moisture sensitive samples to the ALD chamber
  • 300W PLASMA Air Cooled Plasma Head with Air Cooled Automatic Matching Network and RF Power Supply  
  • 200 mm substrate holder accommodating up to 8″ wafer
  • High Speed 10ms Thermal ALD Valves
  • Up to 200 C Manifolds Zones
  • Up to 175 C Material Heater Zones
  • 8 ALD Material Interface Ports, 1 Vapor Push Port
  • Metrology Port QCM (Quartz Crystal Microbalance)
  • Ozone (O3) Generator
  • Precursors Installed: TDMASn (60 C), TDMAH (60 C), TDMAZ (75 C), H2O, Plasma Ar, Plasma O2

Located in room #1419

Lindberg Blue M Tube Furnace for Growth of 2D Materials

The Lindberg Blue M tube furnace is dedicated for the growth of various high-quality 2D materials, such as Graphene, Carbon Nanotubes, PtSe2, PtTe2, PdSe2, PdTe2, quantum dots, etc. A think metal layers, such as Cu, Pt, Pd, Ni, Mo, is usually deposited on prepared substrates using a sputtering system to form a seed layer for the growth of 2D materials.

Specifications:

  • Gas available: H2/Argon forming gas
  • Highest temperature: 1100 C
  • Diameter of quartz: 1″
  • Pump for low pressure CVD growth of 2D materials
  • Whole system sits inside of a chemical fume hood

Located in room #1414

Keyence VK-X3000 Laser 3D Surface Profiler

The Keyence VK-X3000 Laser 3D Surface Profiler is capable to measure targets ranging from nanometers to micrometers to millimeters, and an all-in-one measurement system for in-depth analysis. Two different scanning methods in a single device: laser confocal, focus variation. Selecting the best scanning method for the target material, shape, and measurement range ensures high-accuracy measurement on high-precision part.

  • Semiconductor laser, 661 nm
  • Laser confocal Height repeatability – 10×: 100 nm, 20×: 40 nm, 50×: 20 nm
  • Focus variation Height repeatability – 5×: 500 nm, 10×: 100 nm, 20×: 50 nm, 50×: 30 nm
  • Laser confocal Width repeatability – 10×: 400 nm, 20×: 100 nm, 50×: 50 nm
  • Focus variation Width repeatability – 5×: 400 nm, 10×: 400 nm, 20×: 120 nm, 50×: 65 nm
  • Height display resolution: 1nm. Width display resolution: 1nm
  • Wide-area surface analysis Instantly scan areas as large as 50 × 50 mm
  • XY stage Manual operation range: 70 × 70 mm (2.76” × 2.76”)
  • High speed scanning. Area scanning at 125 Hz
  • Easy measurement of difficult materials. Capture detailed shape variation with nanometer height resolution, even on transparent and mirrored surfaces
  • Optimized optics to eliminate aberration
  • 16-bit sensing with ultra-sensitive photomultipliers
  • 16-bit (65,536-shade) processing, the VK-X is capable of distinguishing different colors and mixed light and dark areas that proved difficult with conventional systems

Located in room #1429

Oxford PlasmaPro 100 Cobra 300

The Oxford PlasmaPro 100 Cobra 300 tool is primarily for Deep Si etching with Bosch process and Cryo Si etching process. It also has the Atomic Layer Etching (ALE) capabilities for etching certain Si based materials, such as SiN. Other ALE recipes are being developed. The system has a load lock, wide temperature range (-150 C to 400 C) with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 6″ diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.

Key features include:

  • Deep Silicon etching with a fast-switching Bosch process, achieving a high silicon etching rate of >8μm/min and excellent selectivity to photoresist (PR) and SiO2 mask materials (>120:1 Si-to-PR, >300:1 Si-to-SiO2)
  • Cryo Si etching process for ultra-smooth sidewall silicon etching, with sidewall scallop size <5nm (RMS)
  • Atomic Layer Etching (ALE) capabilities for etching certain Si-based materials, such as SiN, with a developed SiN ALE process and additional ALE recipes in development
  • Wide substrate temperature range (-150°C to 400°C) with rapid heating/cooling
  • Compatibility with 6″ diameter Si wafers, with a clamp to hold the sample on the RF chuck; small size wafers/pieces can be placed on a 6” silicon carrier wafer
  • C4F8, SF6, CHF3, CF4, O2, and Ar gases available
  • Allowed materials: Silicon, SiO2, SiNx, SiOxNy, Photoresist

Users must ensure photoresists be removed from 7mm of the wafer edges, to prevent wafer from sticking to the clamp.

Located in room #1435

Precision Wafer Polishing & Lapping

15″ Precision Polishing Machine for up to one 8″ or three 4″ wafers.

Equips with a 15″ diameter super flat lapping plate and can be used as a high precision lapping machine for polishing crystal components, semiconductor wafers, and ceramic substrates up to 8″ diameter (high quality polishing for any size below 6″). It also can be adopted as a standard grinding and polishing machine for preparing metallographic samples.

Located in room #1414

Finetech FinePlacer Sigma Sub-Micron Flip-Chip Bonder

The Fineplacer Sigma Flip-Chip Bonder combines sub-micron placement accuracy with a 450 x 150 mm working area and bonding forces up to 1000 N. The system is ideal for all types of precision die bonding and flip chip applications at chip and wafer level. This includes complex 2.5D and 3D IC packages, Focal Plane Arrays (i.e. image sensors), MEMS/MOEMS, and more.

Placing small devices on large substrates is possible. With its alignment system, the smallest structures at the highest magnification can be viewed across the entire field of view. Moreover, it introduces pattern recognition to a die bonder with manual alignment.

  • Large bonding area
  • Reproducible sub-micron placement accuracy
  • Pattern recognition for software verified alignment
  • Wide range of supported component sizes
  • UHD vision alignment system

Located in room #1419

MTI OTF-1200X Tube Furnace

Located in room #1416

Park NX20 Atomic Force Microscope (AFM)

The Park NX20 is a state-of-the-art AFM with a wide variety of modes allowing users to collect almost any information they want about their sample morphology.

Available Modes:
-Non-Contact Mode
-Tapping Mode
-Contact Mode / Lateral Force Microscopy
-PinPoint AFM
-Force Modulation Microscopy
-AFM in Liquid (open or closed environment with temperature control options)
-Scanning Thermal Microscopy
-Scanning Capacitance Microscopy
-Conductive AFM
-Electrostatic Force / Kelvin Probe Force Microscopy
-Piezoresponse Force Microscopy
-Magnetic Force Microscopy
-Nanoindentation
-Nanolithography
-Scanning-Ion Capacitance Microscopy (SICM)
-Scanning Electrochemical Cell Microscopy

Specifications:
Z Scanner Range: 15um
XY Scanner Range: 50um x 50um
Z Scanner noise: 0.02nm
XY Scanner noise: 0.2nm
Sample Size: 2mm to 200mm

 

Located in room #1416

Denton 502B Thermal Evaporator

High vacuum thermal evaporation system for up to 4 substrates up to 4 inches in diameter, or three 4-inch substrates on a lower rotating platter. Equipped with a quartz crystal monitor for thickness. Ability to run two material depositions fully automatically.
 
 
Located in room #1423

NanoFrazor

The NanoFrazor Explore lithography system combines thermal scanning probe lithography and direct write laser lithography for patterning and inspection of complex micro- and nanostructures.
Specifications of our NanoFrazor Explore lithography system include:
– Thermal probe lithography: Ultra-sharp tips enable extremely high resolution lithography down to 15 nm feaures.
– Direct write laser lithography: Fast, direct resist sublimation for large-area patterning, e.g. contact wires and pads.
– Metrology, inspection and alignment: In-situ high-speed imaging with the same tip before, during, or after patterning. No wet development required as the PPA resist is removed directly.
– 3D grayscale nanolithography: Patterning depth can be set for each position of the tip (grayscale value of each pixel).

Located in room #1405

Dicing, Wire Bonding, Microfluidics, 2D Material growth

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AFM, SEM, Electrical Characterization

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TEM

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Advanced Lithography

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E-beam Lithography

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Photolithography & Developing

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Sample Prep & Spin-coating

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Metrology

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Wet Processing

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Dry Etching

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Sputtering & Thin-film release

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Thermal Processing

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Thin-film Deposition ALD, PECVD

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Thin-film Deposition Evaporator, Sputter

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AFM, SEMs, Focus Ion Beam

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Hot Laminator - GBC Catena 35

(Pictured on the left)

Thermal film laminator up to 12″ wide. Specifications:
Mounting up to 3/16″ thick.
Silicone heat rollers for quality seal without scratching
Speed: 1.5 fpm-5 fpm (45.7 cm-152cm)
Max. Roll OD 5″
Core Diameter 1″

Located in room #1405

Carver Hot Embossing System

The Carver Hot Embossing system allows to hot emboss thermoplastic polymers. The two plates can be heated at different temperatures, up to 200C, and it’s possible to apply up to 15tons (1000lbs minimum) forces. The equipment has been successfully tested with PC, PMMA, COC-COP, PTFE, PE, to mention some materials. It can be used with silicon, epoxy, glass, aluminum or nickel molds depending on the desired feature size and gives a perfect replica of the mold on your sample. The Carver Hot Embossing System is located inside the PDMS Clean Space.

Located in room #1414

Fisher Oven

Fisher Scientific programmable, forced draft furnace. Max temp: 650C
 
 
Located in room #1416

Lindberg Mini-Mite Tube Furnace

Microprocessor-based self-tuning PID control (proportional, integral, derivative) provides optimum thermal process without overshoot. Single program with multiple segments for ramp (up and down) and dwell (timed hold) temperature control. Adjustable high limit overtemperature protection. Simultaneous LED display of actual temperature vs. setpoint. May be configured to display temperature in either 蚓 or 蚌

Ulvac MILA-3000 Minilamp Annealer

(Pictured on the right) Capability of heating in Nitrogen and Forming Gas (5%Hydrogen in Nitrogen) at atmospheric pressure, as well as vacuum (~10 Torr). Maximum annealing temperature is 1,100°C. Maximum sample dimension is 20mm (w) x 20mm (d) x 20mm (h). Maximum heating rate is ~50°C/sec.

Located in room #1431

AccuThermo AW 610 RTP (2)

(Pictured on the left) Manually loaded, single-wafer rapid thermal annealing system, capable of processing silicon only (NO III-V, II/VI materials) up to 100mm in diameter.

Available process gases: N2, O2, 5%H2/N2 (at atmospheric pressure)

Max. temperature: 1100C

Max. heating rate: 50C/s

Max. anneal duration is temperature dependent (ranging from 60s at 1100C to 3600s at 450C)

Located in room #1431

Carbolite HTCR 6/28 High Temperature Clean Room Oven

The Carbolite HTCR 6/28 is a clean room oven with a working temperature range or 50C to 500C. Chamber dimensions are 12″ W x 12″ D x 12″ H. Air circulation is provided by a heavy duty fan impeller, directly driven by a totally enclosed fan ventilated motor. N2 gas can be used for purging.

 

Located in room #1443

AccuThermo AW 610 RTP (1)

Manually loaded, single wafer rapid thermal annealing system, capable of processing silicon only (NO III-V, II/VI materials) up to 100mm in diameter.

Available process gases: N2, O2, 5%H2/N2 (at atmospheric pressure)

Max. temperature: 1100C

Max. heating rate: 50C/s

Max. anneal duration is temperature dependent (ranging from 60s at 1100C to 3600s at 450C)

 

Located in room #1431

MLA150 One

Overview: The Heidelberg maskless aligner (MLA150) is a direct write lithography tool with high writing speeds and easy operation. It allows the user to directly pattern photoresists without the need for photomasks; CAD files are written directly into the resist. Photoresists for g-, h-, and i-line exposure can be used with the system and a low-quality exposure mode can reduce exposure times. The system has additional features not typically found in mask aligners. It can automatically add labeling and serialization information to designs. When using structures with random locations, the software’s Draw Mode allows exposures to be drawn on a real-time view of the substrate from the system’s camera. For situations where three dimensional patterns are needed in the photoresist, the MLA150’s grayscale capability can be used.

SYSTEM SPECIFICATIONS

  • Light source: diode lasers: 8 W at 405 nm and 2.8W at 375 nm
  • Substrate sizes: 10 mm x 10 mm to 228 mm x 228 mm
  • Maximum exposure area: 200 mm x 200 mm
  • Minimum feature size: 1.0 µm (isolated line)
  • Alignment: Front-side alignment accuracy: < 0.5 µm
  • Alignment: Back-side alignment accuracy: < 1 µm
  • Grayscale: 128 levels

  • CAD input formats: GDSII, DXF, CIF, Gerber

Located in room #1405

EVG620 Lithography/NIL System

EVG620NT Semi-automated Double Side Mask Alignment System (up to 150mm, double side, manual handling)
Broad band UV source
Exposure modes: proximity, soft, hard, and vacuum (up to 100 mm substrate) contact
Separation distance: 0-300 um adjustable via software
Wafer size: up to 150 mm, pieces down to 20 mm x 20 mm.
Wafer thickness 0.1-10 mm (for top side configuration only)
Mask sizes: 7 inch x 7 inch, 5 inch x 5 inch or 4 inch x 4 inch.
Semi automatic loading with mechanical prealignment on chuck
Quick change of mask and chuck.
Tooling for soft UV-Nanoimprinting & Micro Contact Printing.

 

Located in room #1413

HTG Mask Aligner

Karl Suss MA6 Mask Aligner

Exposure modes: contact (soft, hard, low vacuum, vacuum) and proximity.
Wavelength range UV400 350-450 nm.
Resolution down to 0.6 um in vacuum contact mode.
Alignment methods: Top Side Alignment with accuracy down to 0.5 um.
Alignment methods: Bottom Side Alignment with accuracy down to 1 um.
Wafer size up to 150 mm, pieces down to < 5 mm x 5 mm. Mask size up to 7 inch x 7 inch, Required mask thickness = 90 mil

Located in room #1413

Karl Suss MJB3 Mask Aligner

The MJB3 offers flexibility in handling of irregularly shaped substrates of differing thickness as well as standard sized substrates up to 3 inch diameter.
 
Specifications:
Mask size: 2.5 inch 3 inch and 4 inch
Substrate sizes: pieces to 75 mm
Range of alignment: X, Y 10mm and Theta 10°
Alignment: Top side alignment down to 1 um
 
Located in room #1413

Jandel Four Point Probe with RM3000 Test Unit

The Jandel four point probe can measure sheet resistance and volume (bulk) resistivity of thin films and wafers. The RM3000 control unit can supply constant currents between 10 nA and 99.99 mA, and measure voltages from 0.01 mV to 1250 mV. For sheet resistance measurements the quote range is 1 milliohm/square to 5×10^8 ohms/square. For volume (bulk) resistivity measurements the quoted range is 1 milliohm.cm to 1 x 10^6 ohm.cm. The system also is equipped with a P/N Typing Unit which can determine whether a material is P- or N-type. The provided probe can accommodate wafers up to 10 inches in diameter and ingots up to 10 inches in diameter by 6 inches high.

 

Located in room #1419

DektakXT Stylus Profilometer

The DektakXT stylus profiler 10th generation thin and thick film step height and surface roughness measurement tool. It features a single-arch design for increased scan stability. The system provides a step-height measures of up to 1 mm with a repeatability of 0.4 nm (4 A) whilst using stylus forces between 1-15 mg. The fully motorized X, Y, Z, R stage accommodates 6 inch wafers and sample thickness up to 1.95 inches. The system is equipped with the latest Vision64 analysis software including stitching and pattern recognition.

 

Located in room #1419

Filmetrics Profilm3D Optical Profiler

The Filmetrics Profilm3D is a white light interferometric (WLI) profilometer system equipped with 5x, 10x, 20x, and 50x objectives. The system allows non-contact wide-field measurements of a sample surface with 0.1 nm Z resolution and 0.1 um X-Y resolution. It can measure specimens with reflectance as low as 0.05% and can accommodate samples as wide as 365 mm and as tall as 100 mm. Imaging modes include: WLI, PSI, composite WLI/PSI, and true color imaging. The resultant data captured is a 3D map of the sample surface. The software allows sophisticated data analysis including stitching.

 

Located in room #1420

J.A. Woollam M-2000D Spectroscopic Ellipsometer

The J.A. Woollam M-2000D spectroscopic ellipsometer is a powerful and versatile tool for thin film characterization. It uses patented RCE (rotating compensator ellipsometer) technology to achieve high accuracy and precision. It has 690 wavelengths in the range of 193-1700 nm, fast data acquisition speed, and mapping capability. Angle of Incidence can be changed from 45°-90° (with Automated Angle Base), maximum substrate thickness is 18 mm. Beam size: 3mm (300um with Focusing Optics installed by requesting staff assistance). Beam divergence: < 0.3° (without focusing).

Located in room #1419

Keyence VHX1000

The VHX-1000 microscope integrates advanced functionality with top of the line imaging and measurement capabilities, including:
– Ability to capture fully-focused images with a depth-of-field 20x larger than conventional microscopes
– Contact angle measurement capability
– 360º observation of a target sample
– 2D and 3D image stitching to expand viewing area by up to 50 times
– 100x – 1000x magnification range
– 16-bit High Dynamic Range imaging mode to enhance contrast and eliminate glare

 

Located in room #1414

Agilent B1500A Semiconductor Device Analyzer

The Agilent B1500A can be used for I-V and C-V characterization of a wide variety of semiconductor and other devices. The system has four SMU’s (Source Measurement Unit) and a CMU (Capacitance Measurement Unit) which are connected to either coaxial or triaxial probes/probe manipulators under a stereoscope. The EasyExpert user interface has a large database of test set ups for a variety of different devices as well as the ability to design your own tests. Data is easily manipulated within the software and exported in the format of your choice.

 

Located in room #1416

Axio Fluorescence Microscope

The Zeiss Axio fluorescence microscope is an upright microscope equipped with:
*LED lamp for bright/dark field imaging and mercury arc lamp for fluorescence imaging
*Transmitted and reflected light path
*6 filter cube modules for BF, DF and various fluorescent colors
*Objectives: 5x, 10x, 20x, 50x, 100x
*Manual stage
*Color camera

 

Located in room #1420

Dektak 150 Surface Profiler

The Dektak 150 surface profiler is an advanced thin and thick film step height measurement tool capable of measuring steps below 100A. It also measures samples up to six inches in dimension and up to four inches thick. The Dektak 150 can be used to profile surface topography and waviness, as well as to measure surface roughness in the nanometer range. The system provides a step-height repeatability of 0.6nm (6A.) The system is equipped with single-axis 4-inch Y auto stage that enables the mapping of 3D images.

 

Located in room #1419

Veeco NT1100 Optical Profiling System

The Veeco NT1100 optical profiler (pictured on the right) provides accurate, non- contact surface metrology for applications in MEMS, thick films, optics, ceramics, advanced materials and more. The system utilizes white light interferometry for high resolution 3D surface measurements, from sub – nanometer roughness to millimeter- high steps (0.1 nm – 1mm range). The system is equipped with an automated stitching stage for substrates up to 4 inches in diameter.

Located in room #1419

Toho Technology FLX-2320 Thin Film Stress Measurement System

Toho FLX Thin Film Stress Measurement System determines (pictured on the right) and analyzes thin film stress on various substrates. It determines stress by measuring the curvature change of pre- and post-deposition of the film. This difference in curvature is used to calculate stress by way of Stoney’s equation, which relates the biaxial modulus of the substrate, thickness of the film and substrate, and the radius of curvatures of pre- and post-process. Curvature is measured by directing a laser at a surface with a known spatial angle. The reflected beam strikes a position sensitive photodiode. The geometry of the film is recorded by scanning the surface. Equipped with a heating element for stress monitoring at high temperatures that allows a thorough understanding of film properties at temperatures from RT to 500°C. Sample Size: 75 to 200mm, Maximum Scan Diameter: 200mm, Measurement Range: 1 to 4,000MPa, Minimum Radius: 2.0m, Maximum Radius: 33km.

Located in room #1419

Filmetrics F20 (2)

The Filmetrics F20 thin film system can be used for rapid determination of thickness and optical constants of thin films. Thickness and optical constants (n and k) of dielectric and semiconductor thin films can be measured in typically less than a second. Measured films must be optically smooth and within the thickness range of ~15 nm to 70 μm. Commonly measured films include semiconductor process films such as oxides, nitrides, resists, and polysilicon, optical coatings such as hardness and anti-reflection coatings, flat panel display films such as polyimides, resist, and cell gaps, and the various coatings used in CD and DVD manufacture.

 

Located in room #1409

Zeiss Axio Imager Optical Microscope

  • Reflected light bright-field.
  • Reflected light dark-field.
  • Transmitted light bright-field.
  • Objectives: 5x, 10x, 20x, 50x, 100x, 150x.
  • High resolution digital imaging (1388×1040 pixel resolution in color). Live image up to 20 frames/sec.
Located in room #1409

Rudolph Auto EL Ellipsometer

Rudolph Auto EL Ellipsometer measures film thickness or index of refraction for a variety of materials.

 

Located in room #1419

HP 4155 Parametric Analyzer/Probe Station

Employs four source/monitor units (SMUs), two voltage source units (VSUs) and two voltage measurement units (VMUs) for measuring and analyzing semiconductor device characteristics.

 

Located in room #1419

Filmetrics F20

The Filmetrics F20 thin film system can be used for rapid determination of thickness and optical constants of thin films. Thickness and optical constants (n and k) of dielectric and semiconductor thin films can be measured in typically less than a second. Measured films must be optically smooth and within the thickness range of ~15 nm to 70 μm. Commonly measured films include semiconductor process films such as oxides, nitrides, resists, and polysilicon, optical coatings such as hardness and anti-reflection coatings, flat panel display films such as polyimides, resist, and cell gaps, and the various coatings used in CD and DVD manufacture.

 

Located in room #1417

Plasma-Therm SLR PECVD

The Plasma-Therm SLR PECVD system (pictured on the right) at Nano3 is a load-locked system with platen transfer. 150 mm diameter wafers can be loaded directly, 100 mm wafer or small pieces can be loaded using a provided aluminum platen. The top electrode of the system is RF powered (maximum 500W). The system is operated at 350C. Gases supplied are 5%SiH4 diluted in helium (max flow 2000sccm), NH3 (max flow 50sccm), N2O (max flow 2000sccm), N2 (max flow 2000sccm), He (max flow 1000sccm), CH4 (max flow 2000sccm) and 80%CF4/20%O2(for chamber cleaning). Current well characterized processes include SiO2, SiNx (high deposition rate 30nm/min) and SiNx (low deposition rate 5.4nm/min). For additional potential processes, please contact Nano3 staff.

Located in room #1429

Denton Discovery 635 Sputter System

The Denton Discovery 635 (pictured on the right) is a three cathode (one RF, two DC) sputter system for deposition of metals and dielectrics. The system is capable of RF bias for pre-deposition cleaning and descum. Stage can heat up to 450°C. Nano3 supplies a wide variety of sputter targets for use. Available process gases: Ar, O2, N2.

Located in room #1423

PDS 2010 Parylene Coater

The PDS 2010 Labcoter 2 Parylene Deposition System  can be used for deposition of Parylene (poly-para-xylylene) onto a variety of substrates. The clear polymer coating formed provides an extremely effective chemical and moisture barrier with high dielectric and mechanical strength. The coating is biocompatible and deposits in a highly conformal way. Substrates up to 6 inches in diameter can be accommodated, and film thicknesses up to ~10 microns can be deposited.
 
 
Located in room #1423

Beneq TFS200 Atomic Layer Deposition

The Beneq TFS 200 system is an Atomic Layer Deposition (ALD) tool for thin film processing based on a hot wall, flow through type reaction chamber, which is integrated into a water-cooled cold wall outer vacuum chamber. It can be operated in thermal ALD mode or in plasma enhanced ALD mode. The system is capable of depositing a variety of oxides and nitrides with extraordinary conformality and precision film thickness control for thickness of up to ~100nm. Deposition temperature range is 25 – 500C. Substrates up to 200mm in diameter can be accommodated. Currently available processes: SiO2, Al2O3, TiO2, HfOx, TiN.

 

Located in room #1429

AJA RF Sputter Deposition Tool

The AJA RF sputter deposition tool may be used for deposition of a variety of dielectrics (oxides, nitrides, etc.). Samples up to four inches in diameter can be accommodated. The system is equipped with a load lock and 5 RF magnetrons arranged in a “sputter-up” configuration. Base pressures in the low 10-9 torr range can be attained. Substrates can be heated up to 600 °C, and RF biasing can be employed for pre-cleaning or for film microstructure control during deposition.

Located in room #1435

AJA DC Sputter Deposition Tool

The AJA DC sputter deposition tool may be used for deposition of a variety of metals (incl. magnetic materials) and other conductive materials. Samples up to four inches in diameter can be accommodated. The system is equipped with a load lock and 3 DC magnetrons arranged in a “sputter-up” configuration. Base pressures in the low 10-9 torr range can be attained. Substrates can be heated up to 600 °C, and RF biasing can be employed for pre-cleaning or for film microstructure control during deposition.
 
 
Located in room #1435
 

Emitech K575X Sputter Coater

Sputter coat non-conducting samples with Cr or Ir prior to SEM analysis. Turbo pump and Peltier cooled sputtering provide fine grain metal deposition desgined for FESEM analysis. One touch operation
 

Oxford Plasmalab 80+ PECVD

The Oxford Plasmalab 80+ PECVD system (pictured on the left)  can be used for plasma-enhanced chemical vapor deposition of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide and amorphous silicon, using 5% Silane/bal He as the silicon source material. Film stress can be controlled by alternating between RF and low frequency plasma during deposition. Predetermined recipes allow the user to generate high quality films with very high uniformity on samples up to 4″ in diameter.

Located in room #1429

Denton Desk IV Sputter Coater

6” OD Pyrex chamber.
Manual or automatic sputtering time.
System dedicated to sample preparation SEM analysis.

 

Located in room #1420

Denton 502A Thermal Evaporator

High vacuum thermal evaporation system for up to 4 substrates up to 4 inches in diameter. 2 sources can be installed. Equipped with a quartz crystal monitor for thickness control.
 
 
Located in room #1423

Temescal BJD 1800 Ebeam Evaporator (2)

The BJD1800 (2) Electron Beam Deposition System is cryo-pumped for typical base pressures in the low 10e-7 Torr range. Pump down, sweep control, and deposition are automated. There are four pockets in the rotating hearth of the electron gun which allows to deposit up to four materials under one pump down. Thickness and deposition rate are precisely controlled by an Inficon STC/3 Deposition Controller. Ebeam Sweep is automatically controlled by a FerroTec Temescal TemEBeam sweep controller. Nano3 provides a wide variety of materials for e-beam deposition.
 
 
Located in room #1425
 

Denton Discovery 18 Sputter System

The Denton Discovery 18 is a three cathode (one RF, two DC) sputter system for deposition of metals and dielectrics. Nano3 supplies a wide variety of sputter targets for use in this system. RF bias may be applied to the sample stage for pre-deposition cleaning or descum. Stage heats to 300°C. Available process gases: Ar, O2, N2.
 
Located in room #1425
 

Temescal BJD 1800 Ebeam Evaporator (1)

The BJD1800 (1) Electron Beam Deposition System is cryo-pumped for typical base pressures in the low 10e-7 Torr range. Pump down, sweep control, and deposition are automated. There are four pockets in the rotating hearth of the electron gun which allows to deposit up to four materials under one pump down. Thickness and deposition rate are precisely controlled by an Inficon STC/3 Deposition Controller. Ebeam Sweep is automatically controlled by a FerroTec Temescal TemEBeam sweep controller. Nano3 provides a wide variety of materials for e-beam deposition.
 
 
Located in room #1425
 

Thermofisher Talos F200X G2 S/TEM

The Talos F200X Scanning/Transmission Electron Microscope (STEM) combines high-resolution S/TEM and TEM imaging with energy dispersive X-ray spectroscopy (EDS) characterization with compositional mapping using 4 in-column SDD Super-X windowless detectors. Talos F200X can perform EELS by using Gatan’s Enfinium ER (977) spectrometer with UltraFast DualEELS spectrum (simultaneous acquisition of low-loss and core-loss spectra). HRTEM line resolution (0.1nm). HRSTEM resolution (0.16nm). EDS resolution (≤136 eV for Mn-Kα and 10 kcps output). EELS resolution (0.8ev).

 

Located in room #1416A

Zeiss Sigma 500 SEM

The Zeiss Sigma 500 is a field-emission SEM that produces exceptional images at high and low accelerating voltages. 0.8nm image resolution is achievable at 15kV, 1.6nm image resolution is achievable at 1kV. The Zeiss Sigma 500 is ideal for organic and inorganic materials, geology and biological samples.

It is equipped with:
*ETD and InLens secondary electron detectors
*STEM detector for high resolution transmission imaging (brightfield, darkfield, and high annular angular darkfield modes);
* Energy-dispersive X-ray (EDX) detector
*Beam booster technology for small probe sizes and high signal-to-noise ratios at low and ultra-low accelerating voltages (3keV down to 200eV).

 

Located in room #1416

Scios DualBeam FIB/SEM

The FEI Scios DualBeam FIB/SEM system is a combination of two systems: a Scanning Electron Microscope (SEM) and a gallium Focused Ion Beam (FIB) system. While the SEM produces high resolution images, the FIB is capable of precise site-specific milling of the specimen materials at room temperature and cryogenic temperature, revealing the structure under the surface layer, making cross sections, preparing TEM lamella, etc.

It is equipped with:
*ETD, BSE (T1), SE (T2), and ICE imaging detectors
*Bruker Quantax 400 60mm2 EDX detector
*EasyLift LT NanoManipulator for TEM lamella lift-out
*GIS systems for Platinum Deposition, Insulator Enhanced Etch (IEE) and Selective Carbon Mill (SCM)
*Cryo stage
*Electron Beam-Induced Current (EBIC) measurement system
*AutoSlice and View G3 extended package
*Avizo/Amira data analysis and visualization package

 

Located in room #1420

Microfluidics Workstation

The microfluidics workstation enables Nano3 users to control microfluidic flows in microchannels. The 16 independent manifolds, with 8ms response time, allow users to regulate the nitrogen pressure in the 16 control lines that can be used for generating pressure-driven microfluidic flows and controlling pneumatic microvalves. The system can be used in manual mode or can be programmed to perform cycles or more complex microfluidics control.

 

Located in room #1414

Apreo SEM

Apreo HiVac is a Schottky Field Emission Scanning Electron Microscope (FESEM) that combines high and low-voltage ultra-high resolution capabilities with an electrostatic lens design. The instrument features beam deceleration and unique in-lens detection offering unprecedented contrast and versatility to researchers working with a variety of materials and devices. Achievable resolution is 0.8nm at 15kV and 1.0nm at 1kV using the immersion lens. The Pathfinder EDS software from Thermo Scientific enables user friendly energy dispersive X-ray microanalysis (EDX). The stage can accommodate samples up to 110mm diameter.
 
 
Located in room #1420

Quanta FEG 250

The Quanta FEG 250 features three modes of operation, high vacuum, low vacuum and ESEM. Achievable resolution is 1.2nm at 30kV and 2.3nm at 1kV with beam deceleration in high vacuum using the in column detector. Low vacuum mode enables imaging of insulating samples without metal coating, and ESEM mode can be used for imaging of high-vacuum incompatible specimens which are impossible to investigate with traditional EM methods. The Pathfinder EDS software from Thermo Scientific enables user friendly energy dispersive X-ray microanalysis (EDX). The stage can accommodate samples up to 50mm diameter.

 

Located in room #1420

Veeco Scanning Probe Microscope

Multimode microscope with Nanoscope IV controller. The MultiMode performs a full range of SPM techniques for surface characterization of properties like topography and elasticity:
– Tapping Mode
– Contact Mode AFM
– Phase Imaging
– Magnetic Force Microscopy (MFM)
– AFM Nanoindentation
– AFM in Liquid

10 um x 10 um non-magnetic scanner with 5 um vertical range.
125 um x 125 um non-magnetic scanner with 5 um vertical range. The maximum sample size is 10 mm diameter.

 

Located in room #1420

GDSII Editor PC

PC dedicated to prepare pattern files for the Raith50 e-beam writer.
 
 
Located in room #2400A

GDSII Editor PC #2

PC dedicated to prepare pattern files for the e-beam writer and photomasks.
 
Located in room #1416
 

Vistec EBPG 5200

High-resolution Gaussian Beam System
Thermal Field Emission source with 50/100kV beam energy
Minimum feature size <8nm Write field size up to 1mm; stitching <30nm (mean + 3 sigma)
Sample holders: 2”, 3”, 4”, 8” wafers and pieces, 6” mask
Please visit Electron Beam Lithography Service for more information.

 

Located in room #1409

Idonus HF VPE-150

Idonus HF VPE-150 is a hydrofluoric acid vapor phase etcher. It consists of a reaction chamber and a lid. A heating element is integrated in the lid. It controls the temperature of the substrate to be etched. Liquid HF is filled into the reaction chamber. The reaction chamber is closed with the lid. The HF vapor is created at room temperature and the etching process starts spontaneously. The etch rate is controlled by the wafer temperature that can be adjusted from 35°C to 60°C. An electrostatic clamping mechanism is integrated in the lid, samples of sizes from 2 cm x 2 cm pieces to full 150 mm wafers can be mounted on the lid directly.
 
 
Located in room#1443
 
 

Oxford Plasmalab 100 RIE/ICP

* The Oxford Plasmalab 100 RIE/ICP is a load-locked deep silicon etcher with wafer transfer.
* ICP 180mm high-density plasma source with 3kW RF generator and automatic matching unit.
* Substrate (Lower electrode) bias provided by independent 300W RF generator close-coupled to the lower electrode.
* Lower electrode can also be pulsed at low frequency (350-460kHz, up to 300W power) for optimized etching of buried insulating layers.
* C4F8, CHF3, CF4, SF6, O2, Ar gases available
* He-back-side cooling
* 100mm or 150mm wafer held down with quartz clamp., single-load
* Cryo mode operation is available on request, please contact nano3equipment@calit2.net.
* Allowed materials: Silicon, SiO2, Si3N4, SiOxNy, and polymer films such as photoresist, PMMA, and polyimide
* Fomblin oil or CrystalBond wax can be used for mounting samples to carrier wafer
* users must ensure photoresists be removed from 7mm of the wafer edges, to prevent wafer from sticking to the clamp.

Located in room #1439

Oxford Plasmalab 80+ RIE

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped system, configured for RIE of SiNx, SiOx and more. Graphite cover plate. 30/300 Watt 13.56 MHz HF generator. Automatch unit connected to lower electrode provides substrate bias. Available gases are CF4, O2, SF6, Ar, BCl3, Cl2 and CHF3.
 
 
Located in room #1439
 

Plasma Etch PE100

The Plasma Etch 100 system is a general purpose O2 plasma etcher. It can be used as a pre-clean prior to depositions or as a resist stripper. Etch rates will vary dependent upon pressure and power. Power can be adjusted between 0 and 300 watts and pressure is controlled by gas flow setting.
 
 
Located in room #1439
 

Plasma-Therm SLR RIE/ICP Plasma Etch System

* The Plasma-Therm SLR RIE/ICP Plasma Etch System is a load-locked deep silicon etcher with wafer transfer.
* The system has an ICP high-density plasma source with a 1000W RF generator at 2 Mhz and automatic matching unit.
* Substrate bias is provided by an independent 500W RF generator at 13.56 MHz, close-coupled to the lower electrode.
* The system is set up for fluorine chemistry. Ar, O2, CHF3, CF4, C4F8, and SF6 are the available gases.
* Helium back-side cooling is used to cool the sample during etch. The system lower electrode is temperature controllable in the range of 5-90C.
* 150 mm diameter wafers can be loaded directly, 100 mm wafer or small pieces can be loaded using a 150 mm carrier wafer.
* Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, Al, Al2O3, and polymer films such as photoresist, PMMA, and polyimide
* Fomblin oil or CrystalBond wax can be used for mounting samples to carrier wafer
* users must ensure photoresists be removed from 7mm of the wafer edges, to prevent wafer from sticking to the clamp

 

Located in room #1439

PVA TePla PS100

(Pictured on the right) Downstream microwave frequency O2 plasma asher for photoresist descum. 2.45 GHz regulated magnetron, 0-300W power. Up to 4 inch round substrates can be accommodated.
 
 
Located in room #1439
 

Trion RIE/ICP Dry Etcher

The Trion etcher is load lock equipped and operated via a touch screen interface. The user may employ either RIE (Reactive Ion Etching) RF power applied at the sample stage or ICP (Inductively Coupled Plasma) RF power applied at the shower head above the sample stage. The system is configured to use both chlorinated and fluorinated gases to perform a wide variety of etch recipes. The system has been upgraded to allow operation at temperatures up to 150C. The following gasses are available for use on the Trion etcher: O2, H2, CH4, Ar, BCl3, Cl2, SF6, He and CF4.
 
 
Located in room #1439
 

Xactix XeF2 Etcher

XeF2 (xenon difluoride) isotropic silicon etcher. Small parts and wafers up to 100mm in diameter can be accommodated.
 
 
Located in room #1439
 

PDMS Clean Space

Small clean area (class 1000) in room 1414 designated for PDMS processing only. Facility includes a Thinky Mixer, Laurel Spin Coater, scale, vacuum desicator, oven, UVO system, I-O puncher (for 500 or 700um ports), sample aligner and hot embossing system. Users may complete the entire PDMS molding process in this clean space. Mold masters must be fabricated in the cleanroom.
 
 
Located in room #1414

TPT Wedge / Ball Bonder

Bench top, semi-automatic thermosonic wire bonder (TPT HB16) with ball/wedge and wedge/wedge capability. TFT touch panel operator system for easy operation.
 
 
Located in room #1414

Vapor Treatment

Vapor treatment system allows the application of a self assembled monolayer (SAM) with antistiction properties. A silanizing agent: FOTS ((Tridecafluoro-1,1,2,2-tetrahydrooctyl) trichlorosilane) vapor, is used to prevent sticking during nanoimprint or soft lithography processes. After the treatment the mold can be reused multiple times and up to 10 4″wafers can be processed simultaneously.
 
 
Located in room #1413

CNC Micro Milling Machine

The Minitech 4 axis CNC micro milling machine can be used for fast prototyping of molds, devices or sample holders. It can be used with polymers or soft metals, to micro-machine complex shapes or precisely drill holes with micro bits. Designs can be implemented using Autodesk Fusion (formerly Fusion 360) or Solidworks. The stepper motors controlling the stage employ micro-stepping, and a XYZ resolution of 1 μm is achieved. The repeatability of the system, including the spindle run-out, has been experimentally found to be less than 5 μm when working on areas a few centimeters across, which is the dimension typically used for microfluidic systems. X, Y, Z Axis Travel 12.0″ x 9.0″ x 9.0″ (300 x 200 x 200mm) Feed Rates .1 to 150 ipm linear .1 to 50 ipm 3-axis simultaneous Stepper Motors 200 steps per revolution in full step mode, rated at 250 oz. in. Drivers Standard Step Modes: Micro stepping modes up to 12,800 steps per revolution (1 step, 1/2 step, 1/4 step, 1/8 step, and 1/64 stepping modes) Resolution Modes • Standard .0005″ full step, .00025 half step • Micro Stepping Modes: .000125″ 1/4 step, .0000625″ 1/8 step, .0000078125″ in 1/64 step Spindle Speeds 1000 RPM to 60,000 RPM Tool Chuck: vacuum chuck.

Located in room #1414

QuikLaze-50 ST2

(Pictured on the left) The New Wave Research QuikLaze-50 ST2 uses Nd:YAG laser ablation to remove a variety of materials commonly found in integrated circuits. Materials can be cut using three wavelengths: 1064, 532 and 355nm with 2x, 10x, 20x and 100x objectives. The setup can be used to trim and correct circuit board components. Minimum cutting size is ~1X1um using the 100X objective.
 
 
Located in room #1435

Thinky Mixer

(Pictured on the right) Centrifugal mixer used for mixing viscous fluids. Fluid container rotates on two axis up to 2000rpm for extremely thorough mixing. Perfect for mixing PDMS. Does not introduce air bubbles during mixing! The Thinky Mixer is located inside the PDMS Clean Space.
 
 
Located in room #1414

Tousimis AutoSamdri 815A

Automatic critical point dryer. 0.4 um internal filtration system delivers clean filtered LCO2 to process chamber. Under-lit chamber with viewing window facilitates operator chamber status viewing. Efficient adiabatic CO2 cooling system, capable of cooling the chamber from ambient room temperature to near 0 C, in less than 1 minute and maintain temperature automatically during both FILL and PURGE modes. Process Chamber size: 1.25″ I.D. x 1.25″ Depth.
 
 
Located in room #1420

Tousimis Autosamdri 815B

(Pictured on the right) Automatic critical point dryer. 0.4 um internal filtration system delivers clean filtered LCO2 to process chamber. Under-lit chamber with viewing window facilitates operator chamber status viewing. Efficient adiabatic CO2 cooling system, capable of cooling the chamber from ambient room temperature to near 0 C, in less than 3 minutes and maintain temperature automatically during both FILL and PURGE modes. Process Chamber size: 4.5″ I.D. x 1.25″ Depth.
 
 
Located in room #1435

West Bond Ball Bonder

Thermosonic ball-wedge wire bonder designed to interconnect wire leads to semiconductor, hybrid, or microwave devices. The machine bonds gold wires ranging from 0.0007 in. to 0.002 in. Bonds are made by the ball-to-wedge technique using ultrasonic energy and work piece heat. Wire is clamped and threaded vertically through a hollow capillary, allowing independent feeding action. The connection is begun with a ball formed on the end of the wire stock by electric discharge, and completed by a wedge bond under the end of the capillary tool. The bonding tool is guided manually by the operator using hand/eye reference to bond targets and elevations.
 
Located in room #1414

UVO Cleaner

(Pictured on the left) Utilizes ultraviolet-generated ozone for effective organics removal.
 
 
Located in room #1416

Disco Automatic Dicing Saw 3220

Precision dicing tool capable of cutting silicon, quartz, alumina and III-V substrates, up to 6 inches in diameter and up to 1mm thick.
 
 
Located in room #1414

West Bond Wedge Bonder

Ultrasonic/thermosonic wedge-wedge wire bonder designed to interconnect wire leads to semi-conductor, hybrid or microwave devices. The machine bonds aluminum or gold wires ranging from 0.0007 in. to 0.002 in. Bonds are made by the wedge-wedge technique using ultrasonic energy to attach aluminum wire at room temperature and adding work piece heat for gold wire. Wire is clamped and threaded diagonally under the bonding wedge, allowing independent feeding action but requiring front-to-back bonding direction. The bonding tool is guided manually by the operator using hand/eye reference to bond targets and elevations. The bonder is currently set up to use 1 mil (25 um) gold wire through a 90-degree wedge tool. A 45-degree tool is available upon request. The machine performs bonding by using the wedge to mash the wire against the device surface, while applying sideways ultrasonic vibration for a short amount of time. Heat is also applied by a radiating coil around the wedge tool.